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The BCR35PNE6327BTSA1 is a dual digital transistor array manufactured by Infineon Technologies, integrating one NPN and one PNP silicon transistor within a single SOT-363-6 surface-mount package. This configuration provides a collector-emitter maximum voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms with an internal resistor ratio of 0.21. It operates reliably across a temperature range from -65°C to +150°C and includes a minimum DC collector/base gain (hFE) of 70.
Verify the specific suffix 'BTSA1' against official Infineon documentation, as standard listings often reference 'E6327XTSA1'. Confirm availability status directly with authorized distributors, as this component may be subject to end-of-life restrictions or limited stock conditions. Ensure compliance with RoHS directives and check for automotive qualification requirements if deploying in regulated environments.
Select this component when a compact solution requires both NPN and PNP switching capabilities in a single footprint. The 10 kOhm input resistance offers a balanced trade-off between drive current requirements and noise immunity. Verify that the 50 V voltage rating and 100 mA current capacity align with the target load specifications before finalizing the design.
This part belongs to the BCR35 series of digital transistors, designed to replace discrete transistor-resistor networks. The E6327 suffix typically denotes the tape and reel packaging format used for automated surface-mount assembly processes. The integration reduces board space and assembly costs compared to using separate discrete components.
BCR35PNH6327XTSA1 is a documented alternative within the same product family.