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The BCR35PNE6433HTMA1 is a dual digital transistor from Infineon Technologies, integrating NPN and PNP bipolar junction transistors within a single SOT-23 package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes built-in bias resistors with a typical ratio of 0.21 and an input resistance of 10 kΩ. Key electrical parameters include a minimum DC current gain (hFE) of 70, a transition frequency (fT) of 150 MHz, and a maximum power dissipation of 250 mW. It operates within a temperature range of -55°C to +150°C and meets AEC-Q100 automotive qualification standards.
Verify the specific suffix E6433HTMA1 against official Infineon documentation to confirm pinout orientation and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the component matches the required dual NPN/PNP configuration rather than single-type alternatives.
Select this component when a dual transistor solution is required to save board space compared to discrete pairs. Verify that the 100 mA collector current and 50 V voltage ratings exceed the application's peak requirements. Consider the 250 mW power dissipation limit and ensure adequate thermal management on the PCB trace area.
This part belongs to the BCR35 series of dual digital transistors. It serves as a compact alternative to using separate NPN and PNP devices, offering matched characteristics within a single SOT-23 housing. The series is designed for general-purpose switching and logic inversion tasks in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's cross-reference tools or official distributor databases for verified equivalents.