BCR35PNE6433HTMA1

BCR35PNE6433HTMA1

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:bfeb85209281 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:150MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

Download product information

BCR35PNE6433HTMA1

Overview

The BCR35PNE6433HTMA1 is a dual digital transistor from Infineon Technologies, integrating NPN and PNP bipolar junction transistors within a single SOT-23 package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes built-in bias resistors with a typical ratio of 0.21 and an input resistance of 10 kΩ. Key electrical parameters include a minimum DC current gain (hFE) of 70, a transition frequency (fT) of 150 MHz, and a maximum power dissipation of 250 mW. It operates within a temperature range of -55°C to +150°C and meets AEC-Q100 automotive qualification standards.

Feature Summary

  • Dual configuration combining NPN and PNP transistors in a compact surface-mount package for space-constrained designs.
  • Integrated base bias resistors eliminate external components, simplifying circuit layout and reducing assembly costs.
  • Automotive-grade reliability certified under AEC-Q100 standards for use in demanding vehicle environments.
  • High switching speed supported by a 150 MHz transition frequency suitable for high-frequency logic applications.

Applications

  • Inverter circuits for AC motor control systems
  • Logic level shifting between different voltage domains
  • Switching applications in automotive electronic control units

Procurement Notes

Verify the specific suffix E6433HTMA1 against official Infineon documentation to confirm pinout orientation and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the component matches the required dual NPN/PNP configuration rather than single-type alternatives.

Selection Notes

Select this component when a dual transistor solution is required to save board space compared to discrete pairs. Verify that the 100 mA collector current and 50 V voltage ratings exceed the application's peak requirements. Consider the 250 mW power dissipation limit and ensure adequate thermal management on the PCB trace area.

Part Context

This part belongs to the BCR35 series of dual digital transistors. It serves as a compact alternative to using separate NPN and PNP devices, offering matched characteristics within a single SOT-23 housing. The series is designed for general-purpose switching and logic inversion tasks in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's cross-reference tools or official distributor databases for verified equivalents.

BCR35PNE6433HTMA1BCR35PNE6433HTMA1

Click on the inquiry