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The BCR35PNH6327XTSA1 is a dual digital transistor array manufactured by Infineon Technologies, featuring integrated NPN and PNP silicon transistors within a compact SOT-363-6 surface-mount package. This component integrates base resistors to simplify circuit design, with typical input resistance values of 10 kOhms and a resistor ratio of 0.21. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device operates across an extended temperature range from -65 °C to +150 °C and meets AEC-Q100 qualification standards for automotive applications.
Verify the specific ordering suffix and packaging format against official Infineon documentation before procurement. Confirm availability status as the component may be subject to end-of-life restrictions or limited supply conditions. Ensure that the selected package variant matches the intended PCB footprint requirements for the SOT-363-6 form factor.
Select this component when a compact solution for both NPN and PNP switching is required in space-constrained designs. Consider the 10 kOhm internal base resistance for drive current limitations and ensure the 50 V voltage rating exceeds the maximum circuit operating voltage. Verify thermal management capabilities given the 250 mW power dissipation limit in the small outline package.
This part belongs to the BCR35 series of digital transistor arrays from Infineon Technologies. It serves as a complementary pair solution, replacing discrete NPN and PNP transistors along with their associated base resistors. The H6327 suffix indicates a specific tape-and-reel packaging configuration used for automated surface-mount assembly processes.
BCR35PNE6327XTSA1 is listed as a related alternative within the same product family.