BCR35PNH6433XTMA1

BCR35PNH6433XTMA1

$0.05
  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:623b8975b65c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:150MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

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BCR35PNH6433XTMA1

Overview

The Infineon BCR35PNH6433XTMA1 is a dual digital transistor featuring integrated NPN and PNP configurations within a single surface-mount package. It operates with a maximum collector-emitter voltage of 50 V for both polarities and supports a continuous collector current up to 100 mA. The device incorporates internal base resistors, specifically R1 at 10 kΩ and R2 at 47 kΩ, which simplify circuit design by reducing component count. With a transition frequency (fT) of 150 MHz and a low saturation voltage of 0.3 V, it ensures efficient switching performance. The unit is housed in the PG-SOT23-3 package, suitable for compact electronic applications requiring dual logic inversion or level shifting.

Feature Summary

  • Dual configuration integrating one NPN and one PNP transistor in a single compact package
  • Integrated base resistors eliminate external biasing components for simplified PCB layout
  • Low saturation voltage ensures minimal power loss during active switching states
  • High transition frequency supports effective operation in high-speed digital signal processing

Applications

  • Logic level translation between different voltage domains in microcontroller interfaces
  • Digital signal inversion and buffering in embedded control systems
  • Pull-up and pull-down resistor replacement in memory and peripheral circuits
  • Switching applications in automotive infotainment and body electronics modules

Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific variant matches the required dual NPN/PNP configuration and resistance values. Check for RoHS compliance status and AEC-Q100 qualification if automotive grade reliability is mandated. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage prior to assembly.

Selection Notes

Select this component when space constraints require combining two discrete transistors into one footprint. The fixed internal resistor values of 10 kΩ and 47 kΩ must align with the target circuit's drive requirements. Consider the 150 MHz frequency limit for high-speed applications. Verify that the 50 V voltage rating exceeds the maximum operating voltage of the application. Evaluate thermal dissipation capabilities within the SOT-23 package for the expected duty cycle.

Part Context

This part belongs to Infineon’s BCR series of AF Digital Transistors, designed to replace multiple discrete components. The H6433 suffix typically denotes specific packaging and tape-and-reel specifications used by distributors. These devices are engineered to reduce board space and assembly costs while maintaining consistent electrical characteristics across production batches.

Replacement Considerations

Direct replacements include other BCR series dual digital transistors from Infineon with matching pinouts and similar resistor ratios. Cross-brand equivalents should be verified for identical NPN/PNP polarity arrangement and physical dimensions. Ensure substitute parts meet the same 50 V voltage and 100 mA current ratings.

BCR35PNH6433XTMA1BCR35PNH6433XTMA1
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