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The BCR523UE6327HTSA1 is a dual NPN silicon digital transistor housed in a 6-pin SC-74 surface-mount package. It integrates two pre-biased transistors with typical base resistors of 1 kΩ and an internal resistor ratio of 0.1. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current of 500 mA, and a minimum DC current gain (hfe) of 70. The device features a maximum power dissipation of 330 mW, a transition frequency of 100 MHz, and operates within a temperature range up to +150 °C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's certificate of conformity. Ensure the component source is authorized to avoid counterfeit risks, as this part number may be subject to end-of-life management protocols.
Select this component when a dual NPN digital transistor with a 50 V rating and 500 mA current capacity is required. The fixed 1 kΩ input resistance suits direct interface with standard logic families. Verify that the SC-74 footprint matches the PCB layout constraints and that the 330 mW power dissipation meets the thermal requirements of the target application environment.
This part belongs to the Infineon BCR series of pre-biased transistors, designed to replace discrete resistor-transistor networks. The UE6327HTSA1 designation indicates a specific mass production variant within the broader BCR523 family, standardized for high-volume manufacturing and consistent electrical characteristics across batches.
Publicly confirmed substitute part numbers are not available in the provided data. Consult Infineon's official cross-reference tools or distributor databases for verified alternatives before implementation.