BCR523UE6433HTMA1

Overview

The BCR523UE6433HTMA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It features a dual-element configuration within a surface-mount SC-74 package, providing six terminals for integrated circuit connections. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 0.5 A. Internal biasing includes a typical input resistor of 1 kΩ with a built-in bias resistor ratio of 10. Key electrical parameters include a minimum DC current gain (hFE) of 70 at specified test conditions, a maximum power dissipation of 330 mW, and a transition frequency of 100 MHz. The component operates reliably up to a maximum junction temperature of +150 °C.

Feature Summary

• Integrated pre-biased design combining NPN transistors with internal resistors to simplify circuit layout
• Dual-element configuration housed in a compact SC-74 surface-mount package for space-constrained applications
• High thermal stability supporting operation at elevated temperatures up to +150 °C

Applications

• General-purpose switching circuits requiring pre-biased logic interfaces
• Driver stages for relays, solenoids, or small loads in industrial control systems
• Level shifting and signal buffering in digital communication interfaces

Procurement Notes

Verify the complete ordering code against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific tape-and-reel packaging matches production requirements. Cross-reference RoHS compliance status with current regulatory standards before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN digital transistor with integrated biasing is required in a six-pin surface-mount form factor. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Verify that the 1 kΩ input resistance aligns with the driving source impedance and logic level requirements.

Part Context

This part belongs to the Infineon BCR series of pre-biased bipolar junction transistors. These devices integrate single or dual NPN/PNP transistors with internal base resistors to reduce external component count. The UE6433 suffix denotes specific binning and packaging variations within the broader BCR product family designed for high-volume consumer and industrial electronics.

Replacement Considerations

Direct substitutes include other Infineon dual NPN digital transistors in SC-74 packages with matching 50 V ratings and similar bias ratios. Verify pinout compatibility and thermal characteristics when considering cross-brand alternatives from manufacturers offering equivalent pre-biased transistor arrays.