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The BCV61B,215 is an NPN general-purpose double transistor manufactured by Nexperia USA Inc. It is housed in a small SOT143B Surface-Mounted Device plastic package with four leads. The device features matched pairs designed for low current applications up to 100 mA and low voltage ratings of 30 V. Key electrical characteristics include a DC current gain (hFE) range of 200 to 450 at VCE = 5 V and IC = 2 mA. The collector-base cut-off current is typically 15 nA at VCB = 30 V. Transition frequency is specified at 100 MHz under standard conditions.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and compliance details. Ensure the selected variant matches the required hFE binning specifications for the intended circuit design. Cross-reference the datasheet revision history to confirm the most recent product data sheet status before finalizing procurement decisions.
Select this component when temperature-independent operating points are required in analog circuits. The matched pair configuration ensures consistent performance between transistors TR1 and TR2. Verify that the SOT143B package dimensions align with the PCB footprint requirements. Confirm that the maximum collector current and voltage limits accommodate the peak operational stresses of the target application.
This part belongs to the BCV61 series of NPN general-purpose double transistors. The 'B' suffix indicates a specific DC current gain binning range compared to other variants like BCV61A or BCV61C. The complement PNP version is the BCV62B. These devices are designed for surface-mount assembly using standard reflow or wave soldering techniques on FR4 printed-circuit boards.
BCV62B serves as the PNP complement within the same family. Other BCV61 variants (A, C) offer different current gain ranges but share identical pinouts and packages.
The DC current gain (hFE) for the BCV61B ranges from 200 to 450 when measured at VCE = 5 V and IC = 2 mA.
The base-emitter saturation voltage decreases by approximately 1.7 mV/K with increasing temperature, while the standard base-emitter voltage decreases by about 2 mV/K.
The thermal resistance from junction to ambient (Rth(j-a)) is typically 500 K/W when the device is mounted in free air.