BCV62B,215

Overview

The BCV62B,215 is a PNP general-purpose double transistor manufactured by Nexperia in an SOT-143B surface-mounted device plastic package. It features matched pairs with a collector-emitter voltage (VCEO) of -30 V and a maximum collector current (IC) of -100 mA per transistor. The DC current gain (hFE) for Transistor TR2 ranges from 220 to 475 at VCE = -5 V and IC = -2 mA. Total power dissipation is 250 mW at Tamb ≤ 25 °C, with a junction temperature range of -65 °C to +150 °C.

Feature Summary

• Matched pair configuration for consistent electrical characteristics between transistors
• AEC-Q101 qualified for automotive electronics applications
• Small SMD plastic package suitable for space-constrained designs

Applications

• Applications with working point independent of temperature
• Current mirrors

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the BCV62B variant when a higher minimum DC current gain is required compared to standard BCV62 or BCV62A versions. Ensure the design accommodates the -30 V collector-emitter voltage limit and -100 mA continuous collector current rating. Verify thermal management requirements against the 250 mW total power dissipation specification at ambient temperatures up to 25 °C.

Part Context

The BCV62B belongs to the BCV62 family of PNP general-purpose double transistors. It serves as the PNP counterpart to the BCM62B matched pair and corresponds to the NPN BCV61B. The component is designed for low-current, low-voltage switching and amplification tasks within compact surface-mount footprints.

Replacement Considerations

BCV62B,235 offers identical electrical specifications but utilizes different packing methods (-235 vs -215). For unmatched variants, consider BCV62,215 or BCV62A,215 depending on required hFE ranges.