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The BCV62BE6327HTSA1 is a dual PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-143-4 surface-mount package. The device supports a maximum collector-emitter voltage of 30 V and a continuous DC collector current of 100 mA. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a saturation voltage of 250 mV. It features a power dissipation rating of 300 mW and a transition frequency of 250 MHz. The component operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.
Verify the specific ordering suffix E6327HTSA1 to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q100 qualification aligns with target automotive or industrial requirements. Check for end-of-life status as some sources indicate potential obsolescence for this variant. Ensure compatibility with SOT-143-4 footprint during PCB layout.
Select this component when a dual PNP BJT with 30 V rating and 100 mA current capacity is required in a small SMD package. Consider the 250 MHz transition frequency for high-speed switching needs. Verify thermal management capabilities given the 300 mW power dissipation limit in the SOT-143-4 housing.
This part belongs to the BCV62 series of dual PNP transistors from Infineon. It shares similar electrical characteristics with single-transistor variants like the BCV62A but offers two matched units in one package. The E6327HTSA1 suffix denotes specific manufacturing and packaging details distinct from other suffixes in the same family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate generic dual PNP SOT-143-4 transistors with matching 30 V/100 mA ratings if direct replacement is needed.