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The BCV64B,215 is a dual PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-143B surface-mount package with four leads. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 30 V. Key electrical parameters include a collector-base voltage (VCBO) of 30 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation rating of 250 mW. The component features a gain-bandwidth product (fT) of 100 MHz and a minimum DC current gain (hFE) of 220. It functions within a temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging orientation and reel specifications. Ensure compatibility with standard SMT reflow profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before integration into regulated assemblies.
Select this component when a matched dual PNP transistor is required in a compact SOT-143B footprint. Consider the 30 V voltage rating and 100 mA current limit for low-power analog designs. Verify thermal management requirements against the 250 mW power dissipation limit at the intended operating ambient temperature.
This part belongs to the BCV6x series of dual transistors produced by Nexperia. These devices are designed as matched pairs to ensure consistent performance in differential and current mirror configurations. The BCV64B variant specifically provides PNP polarity, serving as the complementary counterpart to NPN dual transistor models within the same family.
The BCM62B is documented as a matched version of the BCV62 series. Verify pinout compatibility and electrical parameter tolerances before substituting other dual PNP transistors from different manufacturers or families.