BCW60B,215

Overview

The BCW60B,215 is an NPN general-purpose transistor manufactured by Nexperia in a SOT23 (TO-236AB) surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 32 V. The device exhibits a DC current gain (hFE) range of 180 to 310 at IC = 2 mA and VCE = 5 V. Key electrical parameters include a transition frequency of 250 MHz, a collector cut-off current of 20 nA, and a collector-emitter saturation voltage of 550 mV at IC = 50 mA.

Feature Summary

• Low current capability with a maximum collector current of 100 mA
• Low voltage operation rated for a maximum collector-emitter voltage of 32 V
• Designed for general purpose switching and amplification applications

Applications

• General purpose switching circuits
• Amplification stages

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a low-voltage, low-current NPN transistor is required for compact designs. The BCW60B variant provides a moderate current gain suitable for standard amplification tasks. Ensure the design operates within the 32 V collector-emitter limit and 100 mA current threshold to maintain reliability.

Part Context

This part belongs to the BCW60 series of NPN general-purpose transistors. The series includes complementary PNP devices in the BCW61 series. The BCW60B marking code distinguishes it from other variants like BCW60C and BCW60D based on their respective hFE ranges.

Replacement Considerations

Direct substitutes include BCW60C and BCW60D from the same series, provided their specific hFE ranges align with circuit requirements. Verify pinout compatibility as all share the SOT23 configuration.