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The BCX56,135 is an NPN medium power transistor manufactured by Nexperia in a SOT89 (SC-62) surface-mounted plastic package. It features a collector-emitter voltage of 80 V and a continuous collector current capability of 1 A. The device offers a DC current gain range of 63 to 250 under specified conditions. Key electrical limits include a collector-base voltage of 100 V, an emitter-base voltage of 5 V, and a peak collector current of 2 A for single pulses up to 1 ms. Total power dissipation varies from 0.50 W to 1.35 W depending on the PCB mounting pad area.
Verify the specific ordering suffix matches the required binning or packaging format. Confirm that the component status aligns with production requirements rather than development phases. Ensure the selected variant meets the necessary thermal resistance specifications for the intended PCB footprint. Cross-reference the marking code BH with the datasheet to validate authenticity upon receipt.
Select this component when an NPN transistor with 80 V rating and 1 A current capacity is required in a compact SMD form factor. Consider the specific hFE binning needs, as the BCX56 designation covers a gain range of 63 to 250. Evaluate thermal management strategies based on the available collector mounting pad area on the PCB to maximize power dissipation capabilities effectively.
This part belongs to the BCX56 series of NPN medium power transistors produced by Nexperia. The series includes variants such as BCX56-10 and BCX56-16, which offer different current gain characteristics while sharing the same physical package and voltage ratings. All variants utilize the SOT89 package designed for efficient heat transfer through the exposed collector pad.
BCX56-10,115
Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base.
The maximum peak collector current is 2 A for a single pulse duration of tp ≤ 1 ms.
Total power dissipation ranges from 0.50 W on a standard footprint to 1.35 W when mounted on a FR4 PCB with a 6 cm² collector mounting pad.