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The BD140 is a PNP silicon epitaxial planar transistor manufactured by STMicroelectronics. It operates within the SOT-32 plastic package and serves as the complementary counterpart to the NPN BD139 device. The component supports a collector-emitter voltage of -80 V and a continuous collector current of -1.5 A, with a maximum power dissipation of 1.25 W at ambient temperature. DC current gain (hFE) ranges from 25 to 250, with specific variants offering pre-selected gain groups for consistent performance in audio amplifier and driver applications.
Verify the exact ordering code suffix when purchasing, as it determines the specific DC current gain grouping and packaging format. Confirm that the required hFE range aligns with the selected variant's specifications. Ensure the procurement channel provides authentic STMicroelectronics products to guarantee compliance with absolute maximum ratings and thermal characteristics.
Select the BD140 when a PNP low-voltage transistor is needed to complement an NPN device like the BD139 in push-pull configurations. Consider the specific gain group requirements of the circuit design; choose standard gain variants for general purposes or pre-selected gain codes if tighter tolerance is necessary. Verify thermal management capabilities based on the expected operating junction temperature and ambient conditions.
The BD140 belongs to a family of complementary low-voltage transistors produced by STMicroelectronics. It pairs directly with the BD136 (standard gain) and BD139/BD140 (higher voltage/current variants). This series utilizes the SOT-32 package, providing a compact solution for general-purpose switching and amplification tasks where matched PNP-NPN characteristics are beneficial.
The BD136 is the direct complementary match within the same gain tier. For higher voltage requirements, consider the BD140-16 variant which shares the same package but may have different gain groupings.