BD238G

BD238G

  • Description:TRANS PNP 80V 2A TO-126
  • Series:-

SKU:2f2f91b1c175 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 80V 2A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:25 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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BD238G

Overview

The BD238G is a PNP plastic medium power bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 80 Vdc and a continuous collector current of 2.0 Adc. The device supports a total device dissipation of 25 W at 25°C case temperature, with an operating junction temperature range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 40 minimum at 150 mA, a collector-emitter saturation voltage of 600 mV maximum at 1 A, and a gain-bandwidth product of 3 MHz.

Feature Summary

  • Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
  • High DC current gain capability for efficient signal amplification.
  • Epoxy casing meets UL 94 V0 flammability rating at 0.125 inches thickness.

Applications

  • Audio amplifier circuits
  • Driver stages in complementary configurations
  • Quasi-complementary circuit designs

Procurement Notes

Verify component status before design finalization as the BD238G may be discontinued. Consult official onsemi channels for current availability and lifecycle updates. Ensure compliance with RoHS standards and Pb-free packaging requirements specified in the datasheet. Validate thermal management strategies against the provided safe operating area curves.

Selection Notes

Select this component for medium-power applications requiring high DC current gain and robust thermal performance. Consider the TO-225 package style and pin configuration for board layout compatibility. Evaluate the 80 V collector-emitter voltage rating against circuit peak voltages. Review the thermal resistance characteristics for heat sink requirements.

Part Context

The BD238G belongs to the BD23x series of plastic medium power bipolar transistors, which also includes the BD237G (NPN) and BD234G (PNP). These devices are engineered for complementary operation in audio and driver applications. The 'G' suffix indicates a Pb-free package compliant with RoHS directives.

Replacement Considerations

Public confirmed substitute part numbers: BD234G (complementary PNP variant within same series).

BD238GBD238G

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