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The BD238G is a PNP plastic medium power bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 80 Vdc and a continuous collector current of 2.0 Adc. The device supports a total device dissipation of 25 W at 25°C case temperature, with an operating junction temperature range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 40 minimum at 150 mA, a collector-emitter saturation voltage of 600 mV maximum at 1 A, and a gain-bandwidth product of 3 MHz.
Verify component status before design finalization as the BD238G may be discontinued. Consult official onsemi channels for current availability and lifecycle updates. Ensure compliance with RoHS standards and Pb-free packaging requirements specified in the datasheet. Validate thermal management strategies against the provided safe operating area curves.
Select this component for medium-power applications requiring high DC current gain and robust thermal performance. Consider the TO-225 package style and pin configuration for board layout compatibility. Evaluate the 80 V collector-emitter voltage rating against circuit peak voltages. Review the thermal resistance characteristics for heat sink requirements.
The BD238G belongs to the BD23x series of plastic medium power bipolar transistors, which also includes the BD237G (NPN) and BD234G (PNP). These devices are engineered for complementary operation in audio and driver applications. The 'G' suffix indicates a Pb-free package compliant with RoHS directives.
Public confirmed substitute part numbers: BD234G (complementary PNP variant within same series).