BD676G

Overview

The BD676G is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with a maximum collector-emitter voltage (VCEO) of 45 Vdc and a continuous collector current (IC) rating of 4.0 Adc. The device supports a total power dissipation of 40 W at a case temperature of 25 °C, with a thermal resistance junction-to-case of 3.13 °C/W. Electrical characteristics include a minimum DC current gain (hFE) of 750 at IC = 1.5 Adc and VCE = 3.0 Vdc. The emitter-base voltage (VEB) is rated at 5.0 Vdc, and the operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

• Monolithic Darlington configuration designed for high DC current gain applications
• Complementary pairing capability with NPN counterparts in general-purpose amplifier circuits
• Pb-Free packaging compliant with RoHS standards

Applications

• Output devices in complementary general-purpose amplifier applications
• Power switching circuits requiring high current gain
• Audio amplification stages utilizing PNP polarity

Procurement Notes

Verify the specific part number suffix against the manufacturer's ordering information table to confirm availability status. Some variants within this series are marked as discontinued and not recommended for new designs. Confirm package style and shipping unit quantities directly with authorized distributors or onsemi representatives prior to procurement.

Selection Notes

Select the BD676G when a PNP output stage requires a 45 V collector-emitter breakdown voltage and up to 4 A continuous current handling. Ensure the application design accounts for the 40 W power dissipation limit at 25 °C case temperature and applies appropriate derating factors for higher thermal environments. Verify compatibility with complementary NPN transistors if used in push-pull configurations.

Part Context

The BD676G belongs to a series of plastic medium-power silicon PNP Darlington transistors produced by onsemi. This family includes complementary NPN devices such as the BD675 series. The components utilize planar base island technology and are housed in the TO-225 (CASE 77-09) package, suitable for through-hole mounting in power electronics applications.

Replacement Considerations

The BD678G, BD678AG, BD680G, and BD680AG are listed as equivalent to MJE 700, 701, 702, and 703 respectively. Designers should verify voltage ratings and pinout compatibility before substituting these equivalents.