BD679A

BD679A

  • Description:TRANS NPN DARL 80V 4A TO-126
  • Series:-

SKU:d0ec66347004 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN DARL 80V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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BD679A

Overview

The BD679A is an NPN power Darlington transistor manufactured using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. The device offers good hFE linearity and high fT frequency performance. Key electrical parameters include a maximum continuous collector current of 4 A, a maximum collector-emitter voltage of 80 V, and a minimum DC current gain (hFE) of 750. It operates within a temperature range of -65°C to 150°C.

Feature Summary

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Good hFE linearity for stable amplification
  • High fT frequency capability

Applications

  • Power switching applications requiring high current gain
  • Amplifier circuits utilizing the linear hFE characteristics
  • Industrial control systems operating in wide temperature ranges

Procurement Notes

Verify the manufacturer origin, as BD679A parts are produced by multiple vendors including NEC and Magnatec. Confirm that the specific unit received matches the required pinout and package dimensions for SOT-32. Ensure compliance with project specifications regarding the monolithic construction and integrated diode functionality before integration.

Selection Notes

Select this component when high current drive capability is needed with minimal input current. The integrated antiparallel diode simplifies circuit design for inductive loads. Consider the 80V voltage rating and 4A current limit against load requirements. The wide operating temperature range supports harsh environment deployment.

Part Context

This part belongs to the broader category of complementary silicon power Darlington transistors. It is often paired with PNP variants like the BD677A in push-pull or bridge configurations. The series provides solutions for applications needing high gain and robust switching performance in industrial and consumer electronics.

Replacement Considerations

Check for direct equivalents from other manufacturers such as Magnatec BD679. Verify pin compatibility and thermal characteristics when substituting. Ensure the replacement maintains the monolithic Darlington structure and integrated diode requirement.

BD679ABD679A

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