BFQ149,115

BFQ149,115

  • Description:RF TRANS PNP 15V 5GHZ SOT-89 3
  • Series:-

SKU:8ec36f674a23 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS PNP 15V 5GHZ SOT-89 3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:5GHz
  • Noise Figure (dB Typ @ f):3.3dB @ 500MHz
  • Gain:-
  • Power - Max:1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 70mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3
  • Grade:-
  • Qualification:-

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BFQ149,115

Overview

The BFQ149,115 is a PNP wideband transistor manufactured by NXP Semiconductors. It operates at frequencies up to 5 GHz and is housed in a SOT89 surface-mount package. The device features a collector-emitter voltage of 15 V, a DC collector current of 100 mA, and a peak collector current of 150 MHz. It provides a transition frequency of 45 GHz and a maximum unilateral power gain of 12 dB at 500 MHz. Total power dissipation reaches 1 W with a junction temperature limit of 150 °C.

Feature Summary

  • Designed for broadband UHF applications including aerial amplifiers and microwave radar systems
  • Optimized for high-frequency performance with a 5 GHz operational capability
  • Utilizes SMD technology within a SOT89 envelope for efficient heat transfer

Applications

  • Broadband aerial amplifiers (30 to 860 MHz)
  • Microwave amplifiers such as radar systems
  • Spectrum analysers

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure the component meets environmental standards required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-frequency signal processing in UHF bands. Evaluate thermal management requirements carefully due to the 1 W power dissipation limit. Ensure biasing circuits accommodate the specified DC current gain range for stable operation across the target frequency spectrum.

Part Context

This part belongs to the NXP Semiconductors RF transistor portfolio. It serves as a specialized solution for wideband amplification tasks where high transition frequency and low noise figure are critical design parameters for maintaining signal integrity in demanding electronic environments.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical specifications match exactly before implementing any alternative components in existing circuit designs.

BFQ149,115BFQ149,115

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