SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFR93AW,115 is a silicon NPN ultra-high frequency transistor manufactured by NXP USA Inc., utilizing an N-type epitaxial layer structure housed in a compact SOT-23 plastic surface-mount package. Designed for high-frequency broadband applications, the device features a typical transition frequency (fT) of 6 GHz and supports a collector-emitter voltage of 12 V. At 800 MHz, it delivers a typical power gain of 14.0 dB with a noise figure of 1.6 dB. The component operates within a junction temperature range up to 150 °C and offers a DC current gain between 40 and 250 at a collector current of 30 mA.
Verify the specific suffix '115' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the selected variant matches the required thermal and electrical specifications for the target design. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.
Select this component for designs requiring high linearity and low intermodulation distortion in RF front-ends. Consider the complementary PNP model BFT93 if differential configurations are needed. Evaluate the trade-off between the SOT-23 package size and thermal dissipation requirements, as the device supports moderate power levels in a small form factor.
The BFR93 series was originally introduced by Philips Semiconductors, now NXP, establishing a standard for high-frequency discrete transistors. The BFR93AW,115 represents a specific manufacturing variant within this lineage, sharing core characteristics with models like BFR93A and BFR93R while adhering to specific packaging or quality standards defined by the manufacturer.
Publicly confirmed substitute part numbers include BFT75R. Designers should verify pinout compatibility and parameter margins when substituting these components in existing circuits.