BFU550XRR

$0.17

Description：RF TRANS NPN 12V 11GHZ SOT-143R
Series：-

SKU:4aeb596e2fa1 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 11GHZ SOT-143R
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：11GHz
Noise Figure (dB Typ @ f)：0.7dB @ 900MHz
Gain：21.5dB
Power - Max：450mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 8V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-143R
Supplier Device Package：SOT-143R
Grade：Automotive
Qualification：AEC-Q101

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BFU550XRR

Overview

The BFU550XRR is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT143R package. It belongs to the BFU5 family, suitable for small signal to medium power applications up to 2 GHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 50 mA, and a transition frequency (fT) of 11 GHz. At 900 MHz with IC = 15 mA and VCE = 8 V, it provides a minimum noise figure (NFmin) of 0.7 dB and a maximum stable gain of 21.5 dB. The device is AEC-Q101 qualified.

Feature Summary

AEC-Q101 qualified for automotive reliability
Low noise figure optimized for sensitive receiver stages
High breakdown voltage capability for robust operation
Wide bandwidth performance up to 2 GHz

Applications

Broadband amplifiers operating up to 2 GHz
Low noise amplifiers for ISM band applications
ISM band oscillators
Applications requiring high supply voltages

Procurement Notes

Verify the specific suffix 'RR' against the official datasheet to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Confirm that the SOT143R package dimensions align with the target PCB footprint. Check for any recent revision updates to the product data sheet before finalizing the design.

Selection Notes

Select this component when low noise performance is critical at frequencies around 900 MHz. The 12 V collector-emitter voltage rating allows for higher supply voltages compared to lower-voltage alternatives. Consider the 50 mA maximum collector current limit when designing bias networks. The SOT143R package offers reverse pinning, which may simplify layout in existing designs.

Part Context

The BFU550XRR is part of the BFU5xx series of NPN wideband silicon RF transistors from NXP Semiconductors. This family is characterized by high gain, low noise, and high breakdown voltages. The BFU550 variant specifically targets applications requiring robust performance in the sub-2 GHz range, such as automotive and broadband IoT systems.