BGA428E6327

RF Amplifiers Overview

The Infineon BGA428E6327 is a silicon monolithic microwave integrated circuit (MMIC) designed as a high-gain low-noise amplifier for wireless communication systems. It operates within the frequency range of 1.4 GHz to 2.5 GHz, covering cellular, GSM, DCS, and PCS bands. The device provides a typical gain of 20 dB with a noise figure of 1.4 dB. It functions on a supply voltage between 2.4 V and 3 V, drawing a current of approximately 25 mA. Key performance metrics include a P1dB output power of -19 dBm and an OIP3 of 7 dBm at 1.8 GHz. The component is housed in a compact PG-SOT363-6 surface-mount package.

RF Amplifiers Feature Summary

• Integrated high-gain and low-noise amplification suitable for receiver front-end stages
• Optimized for multi-band cellular applications including GSM, DCS, and PCS
• Designed for low-power operation with minimal current consumption
• Compact surface-mount packaging facilitates dense PCB layout

RF Amplifiers Applications

• Cellular mobile phone receiver front-ends
• GSM and DCS base station modules
• PCS band wireless communication devices
• Low-noise amplification in RF signal chains

RF Amplifiers Procurement Notes

Verify the specific suffix E6327 to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official documentation prior to integration. Check for end-of-life notifications or obsolescence warnings from Infineon. Validate that the PG-SOT363-6 footprint matches your design constraints. Ensure supply chain stability given potential lifecycle changes for RF components.

RF Amplifiers Selection Notes

Select this component when a balance of high gain and low noise is required for cellular frequencies. Consider the 2.4 V to 3 V operating range against your system power budget. Evaluate the -19 dBm P1dB limit against your input signal levels to prevent compression. Compare the SOT363-6 size against available board space. Verify thermal dissipation requirements are met within the specified temperature range.

RF Amplifiers Part Context

This part belongs to Infineon's BGA series of RF MMICs, specifically engineered for wireless infrastructure and handsets. It complements other low-noise amplifiers in the portfolio by offering optimized performance for dual-band and tri-band cellular applications. The technology leverages silicon processes to provide cost-effective solutions for mass-market mobile devices requiring reliable RF signal conditioning.

RF Amplifiers Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult Infineon's official replacement guides or contact technical support for qualified alternatives if this component becomes unavailable.