RF Amplifiers BGA8U1BN6E6327XTSA1 product image

BGA8U1BN6E6327XTSA1

$0.61
  • Description:IC RF AMP 5.15GHZ-5.85GHZ TSNP6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:56ee0aa60c17 Category: Brand:

  
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BGA8U1BN6E6327XTSA1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC RF AMP 5.15GHZ-5.85GHZ TSNP6. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for BGA8U1BN6E6327XTSA1

  • Description:IC RF AMP 5.15GHZ-5.85GHZ TSNP6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:5.15GHz ~ 5.85GHz
  • P1dB:-5dBm
  • Gain:-
  • Noise Figure:1.6dB ~ 5dB
  • RF Type:-
  • Voltage - Supply:1.6V ~ 3.1V
  • Current - Supply:4mA
  • Test Frequency:5.15GHz ~ 5.85GHz
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN
  • Supplier Device Package:PG-TSNP-6-2
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for BGA8U1BN6E6327XTSA1

BGA8U1BN6E6327XTSA1

RF Amplifiers Overview

The BGA8U1BN6E6327XTSA1 is a silicon germanium (SiGe) monolithic microwave integrated circuit (MMIC) low noise amplifier manufactured by Infineon Technologies. Designed for RF applications, it operates within a frequency range of 4 GHz to 6 GHz, with specific testing conducted at 5.5 GHz. The device functions on a supply voltage between 1.6 V and 3.1 V, drawing a typical operating current of 4.5 mA. Key performance metrics include a gain of 13.7 dB, a noise figure of 1.6 dB, a P1dB compression point of -18 dBm, and an OIP3 of -10 dBm. It is housed in a TSNP-6 surface-mount package and supports an operating temperature range from -40°C to +85°C.

RF Amplifiers Feature Summary

  • Utilizes SiGe technology for high-frequency RF amplification
  • Optimized for low noise figure and stable gain in the 4–6 GHz band
  • Compact SMD packaging suitable for space-constrained wireless designs

RF Amplifiers Applications

  • Wireless LAN systems operating in the 5 GHz ISM band
  • Point-to-point radio communication links
  • Satellite navigation receiver front-ends
  • Broadband data transmission equipment

RF Amplifiers Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches the specific manufacturing batch. Ensure storage conditions adhere to moisture sensitivity level requirements prior to reflow soldering. Validate that the TSNP-6 footprint aligns with the target PCB design specifications before finalizing procurement orders.

RF Amplifiers Selection Notes

Select this component when designing circuits requiring low-noise amplification in the 4–6 GHz spectrum with strict power consumption limits. The 4.5 mA current draw suits battery-operated or energy-efficient devices. Consider the -18 dBm P1dB limit for signal linearity requirements. The SiGe process offers robust performance across the specified industrial temperature range compared to standard silicon alternatives.

RF Amplifiers Part Context

This part belongs to Infineon’s BGA series of RF MMICs, which are engineered for wireless connectivity solutions. The BGA8U1 variant specifically targets higher frequency bands compared to sub-3 GHz models like the BGA5H1. These components integrate bias networks and matching elements into a single chip, simplifying schematic design and reducing board space for modern mobile and IoT hardware.

RF Amplifiers Replacement Considerations

BGA8U1BN6E6327XTSA1 is marked as End-of-Life (EOL). No direct public substitute part numbers are confirmed in the provided documentation. Designers should consult official replacement guides or contact the manufacturer for qualified alternative components.

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