BGAP2D30AE6327XTSA1

RF Amplifiers Overview

The BGAP2D30AE6327XTSA1 is a driver amplifier from Infineon Technologies designed for wireless infrastructure applications. It operates at a maximum frequency of 4200 MHz and delivers a gain of 35.2 dB. The device features a third-order output intercept point (OIP3) of 34.5 dBm. It is housed in a PG-TSNP-16 package and complies with RoHS standards while being halogen-free.

RF Amplifiers Feature Summary

• Engineered as a pre-driver amplifier for wireless infrastructure systems
• Provides high linearity performance suitable for demanding RF applications

RF Amplifiers Applications

• Wireless infrastructure systems
• RF driver stages in base stations

RF Amplifiers Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific package variant matches the design requirements. Cross-reference the datasheet revision history to validate current electrical specifications before finalizing procurement decisions.

RF Amplifiers Selection Notes

Select this component when designing wireless infrastructure solutions requiring a dedicated driver stage. Ensure the system architecture supports the specified operating frequency range. Evaluate thermal management capabilities within the PG-TSNP-16 package constraints to maintain optimal performance levels during operation.

RF Amplifiers Part Context

This model belongs to the BGAP2D30A series of driver amplifiers manufactured by Infineon Technologies. The series targets high-performance RF applications, specifically focusing on infrastructure needs. The product maintains compliance with environmental regulations through its halogen-free construction.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available.