BGU7224X

RF Amplifiers Overview

The BGU7224X is a SiGe:C low-noise amplifier (LNA) MMIC designed for the 2.4 GHz ISM band, specifically covering 2400 MHz to 2500 MHz. It provides a typical gain of 15 dB with a noise figure of 1 dB. The device operates on a supply voltage ranging from 3 V to 3.6 V and features an integrated bypass function. Packaged in a compact 6-HXSON (1.6x1.6 mm) surface-mount case, it is optimized for applications requiring high linearity and low power consumption in wireless communication systems.

RF Amplifiers Feature Summary

• Utilizes Silicon Germanium Carbon (SiGe:C) technology for enhanced performance
• Integrates a bypass control function for flexible system management
• Designed for minimal current consumption within the specified voltage range

RF Amplifiers Applications

• Wireless LAN modules operating in the 2.4 GHz ISM band
• Bluetooth transceiver front-end circuits
• Zigbee and other IEEE 802.15.4 based sensor networks

RF Amplifiers Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package variant. Check for end-of-life status implications regarding long-term supply availability. Ensure compliance with RoHS3 standards if environmental regulations apply to the final assembly. Validate pinout compatibility during integration into existing PCB layouts.

RF Amplifiers Selection Notes

Select this component when designing receivers for the 2.4 GHz ISM band requiring a balance of low noise and moderate gain. The integrated bypass feature allows for power-down modes, making it suitable for battery-operated devices. Consider the small HXSON footprint for space-constrained designs. Evaluate the 1 dB noise figure against system sensitivity requirements to ensure adequate signal-to-noise ratio.

RF Amplifiers Part Context

This part belongs to NXP's portfolio of RF amplifiers targeting short-range wireless communications. It complements other LNAs and power amplifiers in the same frequency range, offering a complete solution for front-end module design. The SiGe:C process enables robust performance across temperature variations compared to standard silicon alternatives.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product status is listed as obsolete, alternative components must be sourced by verifying functional equivalence in gain, noise figure, and package dimensions through independent datasheet comparison.