BIDW40N65H5

$4.96

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-

SKU:d327367bef9a Category: Single IGBTs Brand: Bourns Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-
Mfr：Bourns Inc.
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
Power - Max：300 W
Switching Energy：1.9mJ (on), 0.52mJ (off)
Input Type：Standard
Gate Charge：111 nC
Td (on/off) @ 25°C：28ns/116ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：165 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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BIDW40N65H5

Overview

The Bourns BIDW40N65H5 is a discrete Insulated Gate Bipolar Transistor (IGBT) utilizing Trench-Gate Field-Stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25 °C, dropping to 40 A at 100 °C case temperature. The device operates with a maximum junction temperature of 175 °C and offers a typical saturation voltage of 1.65 V at 40 A. Total power dissipation reaches 300 W, supported by a thermal resistance of 0.5 °C/W from junction to case for the IGBT section.

Feature Summary

Novel trench-gate field-stop technology provides optimized conduction and high-speed switching capabilities.
Integrated fast recovery diode (FRD) reduces switching losses and improves dynamic characteristics.
Robust design ensures low collector-emitter saturation voltage and enhanced thermal performance.

Applications

Switched-Mode Power Supplies (SMPS)
Uninterruptible Power Sources (UPS)
Power Factor Correction (PFC)
Inverters
Photovoltaic systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Ensure compliance with RoHS Directive 2015/863 requirements. Confirm that the specific lot marking matches the expected production year and month codes. Validate thermal management designs against the provided transient thermal impedance curves for your specific operating conditions.

Selection Notes

Select this component for applications requiring high-voltage handling up to 650 V and currents up to 40 A continuous. Consider the TO-247-3L package for through-hole mounting and efficient heat sinking. Evaluate gate resistance values to balance switching speed against electromagnetic interference, referencing the typical switching loss versus gate resistance data.

Part Context

This device belongs to the Bourns BID series of discrete IGBTs. The series combines MOS gate technology with bipolar transistor structures to deliver high efficiency in power conversion. The H5 suffix indicates a specific revision within the High-Speed optimization category, designed for reduced switching losses compared to standard variants.

Replacement Considerations

Cross-reference with other 650V, 40A IGBTs in the TO-247-3L package. Verify pinout compatibility and thermal resistance specifications before substitution. Check datasheet parameters for saturation voltage and switching times to ensure equivalent circuit performance.