BM3G007MUV-LBE2

$13.76

Description：NANO CAP, ECOGAN, 650V 70M 2MHZ,
Series：Nano Cap™
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b367605831a1 Category: Power Distribution Switches, Load Drivers Brand: Rohm Semiconductor

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Product introduction

BM3G007MUV-LBE2 is listed in the Power Distribution Switches, Load Drivers range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NANO CAP, ECOGAN, 650V 70M 2MHZ,. Review the specifications below when checking this part for your BOM.

Power Distribution Switches, Load Drivers specifications for BM3G007MUV-LBE2

Description：NANO CAP, ECOGAN, 650V 70M 2MHZ,
Series：Nano Cap™
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Switch Type：General Purpose
Number of Outputs：1
Ratio - Input:Output：1:01
Output Configuration：Low Side
Output Type：N-Channel
Interface：-
Voltage - Load：650V
Voltage - Supply (Vcc/Vdd)：6.25V ~ 30V
Current - Output (Max)：-
Rds On (Typ)：70mOhm
Input Type：Non-Inverting
Features：Power Good, Slew Rate Controlled
Fault Protection：Over Temperature, UVLO
Operating Temperature：-40°C ~ 105°C
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：VQFN046V8080
Package / Case：46-VFQFN Exposed Pad
Grade：-
Qualification：-

Power Distribution Switches, Load Drivers datasheet and documents for BM3G007MUV-LBE2

BM3G007MUV-LBE2

Power Distribution Switches, Load Drivers Overview

The BM3G007MUV-LBE2 is a 650V GaN HEMT power stage IC from ROHM, integrating an enhanced GaN HEMT and a dedicated gate driver in a single package. Designed for high-efficiency power conversion, it supports switching frequencies up to 2MHz with a typical on-state resistance of 150mΩ. The device features a wide drive voltage range of 2.5V to 30V, ensuring compatibility with various controller ICs. It includes integrated protection functions and peripheral components to maximize performance while reducing component volume and power loss compared to discrete silicon solutions.

Power Distribution Switches, Load Drivers Feature Summary

Integrates 650V GaN HEMT and gate driver for simplified design
Wide gate drive voltage range for broad controller compatibility
Integrated protection and peripheral components for optimized performance

Power Distribution Switches, Load Drivers Applications

Data server main power supplies
AC adapter primary side circuits
Industrial power conversion systems

Power Distribution Switches, Load Drivers Procurement Notes

Verify the specific suffix (LBE2) against the manufacturer's current datasheet to confirm pinout and electrical specifications match your design requirements. Ensure the ordering part number corresponds to the exact tape-and-reel quantity and packaging format specified in the official documentation. Cross-reference the RoHS status and lifecycle status (NRND or Active) directly with the supplier before finalizing procurement decisions.

Power Distribution Switches, Load Drivers Selection Notes

Select this component when replacing super-junction MOSFETs in high-frequency applications requiring reduced PCB area. The wide input voltage compatibility allows direct integration with existing control architectures. Consider the thermal management requirements associated with the VQFN package size and the specific switching frequency targets of the application circuit.

Power Distribution Switches, Load Drivers Part Context

This device belongs to the BM3G0xxMUV-LB series, representing ROHM's EcoGaN technology. It addresses the complexity of driving GaN devices by embedding the necessary gate driver logic within the power stage package. This integration aims to lower parasitic inductance and improve switching speed, targeting next-generation power electronics that demand higher power density and efficiency standards.