BM63364S-VA

Overview

The BM63364S-VA is a 600V Intelligent Power Module (IPM) manufactured by ROHM Semiconductor, designed for three-phase DC/AC inverter applications. It integrates high-side and low-side IGBTs with gate drivers, bootstrap diodes, and protection circuits within an HSDIP-25 package. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a continuous collector current of 15 A at 25°C, and a maximum operating temperature of +100°C. The module features through-hole mounting and silicon technology.

Feature Summary

• Integrates high-side and low-side IGBTs with SOI-based gate drivers for compact three-phase inverter designs.
• Includes built-in protection mechanisms such as short-circuit current protection (SCP), under-voltage lockout (UVLO), and thermal shutdown (TSD).
• Features open-emitter low-side configuration to facilitate external sensing and control.

Applications

• Three-phase DC/AC inverters
• Industrial motor drives
• Servo amplifiers

Procurement Notes

Verify the specific suffix 'VA' against the official ROHM datasheet to confirm pinout and feature set, as suffixes can indicate variations in packaging or internal circuitry. Ensure the intended application does not require automotive-grade certification, as this standard-level product is explicitly noted as unsuitable for vehicle-mounted equipment. Cross-reference the HSDIP-25 package dimensions with your PCB layout requirements.

Selection Notes

Select the BM63364S-VA for applications requiring a 600V IGBT IPM with integrated fault protection in a through-hole package. Compare its 15A continuous current rating and 1.7V saturation voltage against system load requirements. Consider the +100°C maximum operating temperature limit when designing thermal management solutions. Verify compatibility with 3.3V or 5V logic interfaces for the gate driver inputs.

Part Context

This component belongs to the ROHM BM63xx series of Intelligent Power Modules, which are optimized for three-phase inverter topologies. The series typically combines power devices with control ICs to simplify design and improve reliability. The BM63364S-VA specifically utilizes IGBT technology, distinguishing it from MOSFET-based variants in the same family.

Replacement Considerations

Publicly documented parameter-equivalent substitutes include the BM63364S-VC, BM63564S-VA, and BM63574S-VA. Verify pin compatibility and electrical specifications before substitution, as differences in current ratings or saturation voltages may exist between these variants.