BR100/03,113

Overview

The BR100/03,113 is a silicon bidirectional trigger device manufactured by NXP USA Inc., originally specified by Philips Semiconductors. Housed in the SOD27 glass envelope, it is designed for triac and thyristor trigger circuits. Key electrical parameters include a breakover voltage (V(BO)) ranging from 28 V to 36 V with a typical value of 32 V at 25 °C. The device supports a repetitive peak forward current (IFRM) of up to 2 A and delivers an output voltage (VO) of 7 V under a 20 Ω load. It features a breakover current of 50 μA maximum and a risetime of 1.5 μs. Thermal resistance from junction to ambient is typically 330 K/W, with a maximum operating junction temperature of 100 °C.

Feature Summary

• Bidirectional triggering capability for symmetrical gate drive applications
• Glass-encapsulated construction for environmental stability
• Defined output voltage level for reliable interface with control gates

Applications

• Triac trigger circuits
• Thyristor trigger circuits

Procurement Notes

Verify the component origin as Philips Semiconductors or its successor entity NXP USA Inc. Confirm the package type matches the SOD27 outline dimensions provided in the specification. Ensure the ordering suffix corresponds to the specific reel or tape configuration required for assembly processes.

Selection Notes

Select this device when a compact bidirectional trigger solution is required for low-power gate driving. Consider the 28 V to 36 V breakover voltage range to ensure compatibility with the target control circuit threshold. Verify that the 150 mW total power dissipation limit aligns with the thermal management capabilities of the host system design.

Part Context

This component belongs to the family of silicon bidirectional trigger devices intended for phase control applications. It serves as a specialized interface between low-power control signals and high-power switching elements like triacs. The SOD27 package represents a small-outline transistor footprint adapted for this specific semiconductor function.

Replacement Considerations

Cross-reference other silicon bidirectional trigger devices in the SOD27 package. Verify that substitute parts meet the 28 V to 36 V breakover voltage range and support the required 2 A repetitive peak forward current without exceeding the 100 °C junction temperature limit.

FAQ

What is the breakover voltage symmetry of the BR100/03?

The breakover voltage symmetry is specified as a maximum difference of 3.5 V between positive and negative breakover voltages.

How does the output voltage vary with load resistance?

The output voltage is specified as 7 V when measured with a load resistance of 20 Ω in the test circuit defined in the datasheet.

What is the maximum storage temperature for this device?

The maximum storage temperature is 125 °C, while the minimum is -55 °C.