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— IC芯片 | 连接器 | 传感器 | 被动器件 —
BS250KL-TR1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 270MA TO92-18RM. Review the specifications below when checking this part for your BOM.
The BS250KL-TR1-E3 is a P-channel enhancement mode DMOS transistor manufactured by Vishay Siliconix. It features a TrenchFET power MOSFET structure with integrated ESD protection rated at 2000 V. The device provides a drain-source voltage of -60 V and a continuous drain current of -0.27 A at 25 °C. Key electrical parameters include a gate threshold voltage ranging from -1 V to -3 V, an on-state resistance of 6 Ω at VGS = -10 V, and a total gate charge of 1.7 nC.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product change notices. Ensure that the component meets all environmental and trade compliance requirements relevant to your region before finalizing procurement.
Select this component for low-current switching applications requiring robust ESD protection. Evaluate the thermal characteristics, specifically the junction-to-ambient thermal resistance, to ensure adequate heat dissipation within the specified operating temperature range. Verify that the gate drive voltage levels are compatible with the specified threshold voltage ranges for reliable switching operation.
This part belongs to the TP0610KL/BS250KL family of P-channel MOSFETs. It utilizes the TO-92 (TO-226AA) or TO-18 lead form packages. The device is designed for general-purpose switching tasks where compact size and high reliability are required. The marking 'BS250KL' identifies the specific variant within the broader product line.
Consult official datasheets for alternative components such as the TP0610KL-TR1. Verify pinout compatibility and electrical parameter equivalence before substitution.
The device features integrated ESD protection rated at 2000 V.
The gate threshold voltage (VGS(th)) ranges from -1 V to -3 V at a drain current of -250 µA.
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