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BSB028N06NN3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 22A/90A 2WDSON. Review the specifications below when checking this part for your BOM.
The BSB028N06NN3GXUMA1 is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 90 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2.8 mΩ at 10 V gate drive. Packaged in the WDSON-2-3 form factor, it supports surface-mount installation with a junction temperature range spanning from -40 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm exact packaging configuration and reel specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest material content declaration before finalizing procurement plans.
Select this component for designs requiring high current handling within a low-profile footprint. Evaluate thermal management requirements based on the specified power dissipation capabilities. Compare gate charge characteristics against switching frequency demands to ensure optimal driver compatibility and efficiency.
This part belongs to the OptiMOS 3 family of differentiated MOSFETs designed for robust industrial and consumer applications. It represents a generation of silicon-based power transistors focused on reducing losses while maintaining reliability under demanding electrical conditions.
BSB028N06NN3G is identified as a previous version or related part number revision. Verify pinout and parameter equivalence before substitution.
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