BSB044N08NN3GXUMA1

$3.81

Description：MOSFET N-CH 80V 18A/90A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d15f63171089 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB044N08NN3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 18A/90A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB044N08NN3GXUMA1

Description：MOSFET N-CH 80V 18A/90A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 97µA
Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 78W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2, CanPAK M™
Package / Case：3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB044N08NN3GXUMA1

BSB044N08NN3GXUMA1

Single FETs, MOSFETs Overview

The BSB044N08NN3GXUMA1 is an N-channel OptiMOS™3 Power-MOSFET in a CanPAK™ M (MG-WDSON-2) package. It features a drain-source voltage of 80 V and a continuous drain current of 90 A at Tc=25°C. The maximum on-state resistance is 4.4 mΩ, with a typical value of 3.7 mΩ. Total gate charge is 73 nC. Thermal resistance from junction to bottom case is 1.0 K/W and 1.6 K/W for the top. Operating temperature ranges from -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically designed for DC/DC converter applications
Dual-sided cooling capability providing superior thermal resistance
Low profile construction with dimensions under 0.7 mm
100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

DC/DC converters
Industrial power supplies
Telecommunications equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches project requirements. Check datasheet revision history for updates. Ensure storage conditions comply with moisture sensitivity levels. Validate RoHS compliance status prior to integration.

Single FETs, MOSFETs Selection Notes

Select this MOSFET when low profile and high current density are required. Evaluate thermal management needs based on dual-sided cooling options. Compare total gate charge against switching frequency requirements. Consider the 80 V rating for system voltage headroom. Assess PCB copper area impact on thermal performance.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS™3 family, representing advanced power MOSFET technology. It utilizes the CanPAK™ M package for compact surface-mount assembly. The device integrates standard N-channel enhancement mode operation. It is compatible with DirectFET® package footprints.