BSC010N04LSIATMA1

$1.16

Description：MOSFET N-CH 40V 37A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7715f892471c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC010N04LSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 37A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC010N04LSIATMA1

Description：MOSFET N-CH 40V 37A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6200 pF @ 20 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC010N04LSIATMA1

BSC010N04LSIATMA1

Single FETs, MOSFETs Overview

The BSC010N04LSIATMA1 is an N-channel, logic-level OptiMOS Power-MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 1.05 mΩ at VGS=10 V and ID=50 A. The device supports a continuous drain current of 275 A at TC=25 °C and a pulsed drain current of 1100 A. Total gate charge is 87 nC (VGS=0 to 10 V) and output charge is 83 nC. It utilizes a TDSON-8 FL package with enlarged source interconnection for improved solder joint reliability.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous rectification applications
Integrated monolithic Schottky-like diode
Higher solder joint reliability due to enlarged source interconnection
100% avalanche tested

Single FETs, MOSFETs Applications

Synchronous rectification circuits
Automotive target applications qualified according to JEDEC
Power conversion systems requiring low on-resistance

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code including the ATMA1 suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the TDSON-8 FL package dimensions align with the PCB footprint design guidelines provided in the datasheet package outlines section before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V N-channel MOSFET with high current handling capability and integrated body diode characteristics is required. The logic-level gate threshold allows for efficient drive from standard control interfaces. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS Power-MOSFET family designed for 40 V applications. It is manufactured using silicon technology and housed in a surface-mount TDSON-8 FL package. The product complies with RoHS standards and is halogen-free according to IEC61249-2-21 specifications.