BSC016N04LSGATMA1

$2.24

Description：MOSFET N-CH 40V 31A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93c4754489f4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC016N04LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 31A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC016N04LSGATMA1

Description：MOSFET N-CH 40V 31A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC016N04LSGATMA1

BSC016N04LSGATMA1

Single FETs, MOSFETs Overview

The BSC016N04LSGATMA1 is an OptiMOS™ 3 N-channel power MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 1.6 mΩ at VGS=10 V and supports a continuous drain current of 100 A at TC=25 °C. The device utilizes a PG-TDSON-8 package, providing a thermal resistance from junction to case of 0.9 K/W. Key dynamic parameters include a total gate charge of 113 nC at VGS=10 V and a reverse recovery charge of 125 nC for the integrated body diode.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically designed for DC/DC converters and fast-switching applications in switch-mode power supplies.
Features excellent gate charge versus on-resistance figure of merit (FOM) combined with very low on-resistance for high efficiency.
Superior thermal resistance characteristics enabled by the SuperSO8 package design.
Qualified according to JEDEC standards for target applications and includes 100% avalanche testing.

Single FETs, MOSFETs Applications

Switch-mode power supplies (SMPS)
DC/DC converters
Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify that the ordering code matches the specific suffix G for the PG-TDSON-8 package configuration. Confirm compliance requirements including Pb-free plating, RoHS compliance, and halogen-free status per IEC61249-2-21. Ensure the procurement documentation references the correct datasheet revision Rev. 2.1 dated 2020-02-07 for accurate electrical parameter validation.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and low RDS(on) are required for high-current DC/DC conversion. The PG-TDSON-8 package offers a compact footprint with enhanced thermal performance suitable for vertical mounting on FR4 PCBs. Consider the 100 A continuous current capability at case temperature and the logic-level gate drive compatibility for efficient control circuit integration.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 3 family of power transistors. It is manufactured using silicon technology and is housed in a surface-mount PG-TDSON-8 package. The device is designed as a single N-channel enhancement mode transistor intended for robust operation in demanding power electronics environments requiring high reliability and thermal stability.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS 3 devices in the PG-TDSON-8 package offering similar 40 V ratings and comparable on-resistance values. Verify pinout compatibility and thermal resistance specifications before substituting to ensure adequate heat dissipation and electrical performance in the existing circuit layout.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the BSC016N04LSG?

The maximum pulsed drain current (ID,pulse) is 400 A at a case temperature of 25 °C.

Is the BSC016N04LSG qualified for automotive or life-support applications?

The component is qualified according to JEDEC standards for target applications. However, use in life-support devices or automotive systems requires express written approval from Infineon Technologies.