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BSC027N10NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 23A/100A TSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC027N10NS5ATMA1
- Description：MOSFET N-CH 100V 23A/100A TSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 146µA
- Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8200 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSON-8-3
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC027N10NS5ATMA1
Single FETs, MOSFETs Overview
The BSC027N10NS5ATMA1 is an N-channel OptiMOS power transistor with a 100 V drain-source breakdown voltage. It features a maximum on-state resistance of 2.7 mΩ and supports a continuous drain current of 100 A at 25°C case temperature. The device utilizes a TSON-8-3 surface-mount package and operates within a junction temperature range of -55°C to +175°C. Key dynamic parameters include a total gate charge of 111 nC, an output charge of 114 nC, and a typical turn-off delay time of 41 ns.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features superior thermal resistance characteristics for efficient heat dissipation
- Undergoes 100% avalanche testing to ensure robustness against transient energy events
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance switching mode power supplies
- Industrial applications requiring industrial qualification per JEDEC standards
Single FETs, MOSFETs Procurement Notes
Verify the component status as Not Recommended for New Designs (NRND) before initiating procurement. Confirm that the TSON-8-3 package dimensions align with existing PCB footprints. Ensure compliance with RoHS directives and halogen-free requirements according to IEC61249-2-21 specifications during sourcing.
Single FETs, MOSFETs Selection Notes
Select this component for designs prioritizing low conduction losses and high thermal efficiency in compact form factors. Evaluate the 2.7 mΩ maximum RDS(on) against system efficiency targets. Consider the 100 A continuous current rating relative to thermal management capabilities and ambient operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS family of power transistors. It is specifically engineered for 100 V applications using silicon technology. The device integrates advanced trench MOSFET architecture to deliver optimized performance metrics suitable for modern power conversion topologies.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(on), ID, and package type to ensure functional compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
