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BSC059N04LS6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 17A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC059N04LS6ATMA1
- Description：MOSFET N-CH 40V 17A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 49A (Tc), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：830 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 38W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC059N04LS6ATMA1
Single FETs, MOSFETs Overview
The BSC059N04LS6 is an OptiMOS™ 6 N-channel power transistor with a 40V drain-source voltage rating. It features a maximum on-resistance of 5.9mΩ at VGS=10V and supports a continuous drain current of 59A at TC=25°C. The device includes a PG-TDSON-8 FL package with enlarged source interconnection for superior thermal resistance. Key dynamic parameters include a total gate charge of 9.4nC and an output charge of 10.2nC. It operates within a junction temperature range of -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Optimized specifically for synchronous applications
- Features very low on-resistance RDS(on)
- Subjected to 100% avalanche testing
- Provides superior thermal resistance via enlarged source connection
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- High-efficiency power switching circuits
- Industrial motor drive systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component revision. Confirm that the required package variant matches the PG-TDSON-8 FL specification. Check for any updated datasheet revisions or product validation status relevant to industrial application requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when low conduction losses are critical for synchronous designs. Evaluate the thermal performance based on the specified junction-to-case resistance values. Ensure the driving circuit can provide sufficient gate voltage to achieve the optimal low on-resistance characteristics defined in the electrical specifications.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ 6 family, designed for high-performance power management. It utilizes advanced silicon technology to minimize on-state resistance while maintaining robust switching capabilities. The PG-TDSON-8 FL package enhances heat dissipation compared to standard variants, supporting higher current densities in compact layouts.
Single FETs, MOSFETs Replacement Considerations
Consult the official cross-reference data for compatible alternatives. Verify that substitute components match the 40V rating, 59A current capacity, and PG-TDSON-8 FL footprint. Ensure thermal and electrical characteristics align with the original design constraints.
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