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BSC070N10NS5SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 14A/82A 8SWSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC070N10NS5SCATMA1
- Description：MOSFET N-CH 100V 14A/82A 8SWSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-WSON-8-2
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for BSC070N10NS5SCATMA1
Single FETs, MOSFETs Overview
The BSC070N10NS5SCATMA1 is an N-channel OptiMOS™ 5 power transistor rated for a maximum drain-source voltage of 100 V. It features a maximum continuous drain current of 82 A at 25 °C and a pulsed drain current capability of 328 A. The device exhibits a typical on-state resistance of 6.0 mΩ at VGS=10 V and ID=40 A, with a maximum rating of 7.0 mΩ under the same conditions. Total gate charge is typically 30 nC (0V to 10V), while output charge is 41 nC. Thermal performance includes a junction-to-case bottom thermal resistance of 0.9 K/W and a top thermal resistance of 0.7 K/W. Operating temperature ranges from -55 °C to 175 °C.
Single FETs, MOSFETs Feature Summary
- Dual-side cooled package design providing lowest junction-to-top thermal resistance
- Optimized for high-performance synchronous rectification in switching mode power supplies
- 100% avalanche tested for enhanced robustness
- Lead-free plating compliant with RoHS standards and halogen-free
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance SMPS
- Industrial applications requiring JEDEC JESD47 and JESD22 qualification
- High-efficiency power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the PG-VSON-8 or PG-WSON-8 package variant matches the intended PCB footprint requirements. Cross-reference the datasheet revision 2.2 for any updates to package outlines or electrical characteristics prior to finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when low thermal resistance and high current handling are critical for space-constrained designs. The dual-side cooling capability allows for efficient heat dissipation through both the top and bottom surfaces. Evaluate the 100 V breakdown voltage and 82 A continuous current ratings against peak load requirements to ensure adequate safety margins during operation.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, representing advanced trench technology for power MOSFETs. It utilizes a compact PG-VSON-8 / PG-WSON-8 surface-mount package designed to minimize board space while maximizing thermal performance. The series targets industrial-grade reliability with specific testing protocols defined by JEDEC standards.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives within the OptiMOS™ 5 portfolio. Ensure any replacement maintains compatibility with the PG-VSON-8 or PG-WSON-8 footprint and meets or exceeds the 100 V and 82 A specifications.
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