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BSC088N15LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC088N15LS5ATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：11.7A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 107µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC088N15LS5ATMA1
Single FETs, MOSFETs Overview
The BSC088N15LS5 is an N-channel OptiMOS™ 5 power transistor with a 150 V drain-source breakdown voltage. It features a maximum on-resistance of 8.8 mΩ at VGS=10 V and supports a continuous drain current of 87 A at TC=25 °C. The device utilizes a PG-TDSON-8 package, providing a thermal resistance from junction to case of 0.9 °C/W. Key dynamic parameters include a total gate charge of 40 nC (0V...10V) and an output charge of 94 nC.
Single FETs, MOSFETs Feature Summary
- Logic-level operation for efficient gate drive compatibility
- Superior thermal resistance characteristics for high-power density applications
- Monolithically integrated internal body diode
Single FETs, MOSFETs Applications
- Industrial motor control systems
- DC-DC converter topologies
- Power supply modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC088N15LS5 against the manufacturer's latest datasheet revision history to ensure component equivalence. Confirm that the required package marking matches the official documentation. Ensure compliance with JEDEC industrial application standards during procurement validation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses in 150 V environments. Evaluate the thermal management strategy based on the specified RthJC of 0.9 °C/W. Consider the logic-level threshold for direct microcontroller interfacing without additional level shifting circuitry.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, representing advanced silicon technology for power switching. It is designed for industrial applications and undergoes full qualification according to JEDEC standards. The product is lead-free, RoHS compliant, and halogen-free.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameter alignment and thermal performance specifications.
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