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BSC0901NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 28A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0901NSATMA1
- Description：MOSFET N-CH 30V 28A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0901NSATMA1
Single FETs, MOSFETs Overview
The BSC0901NSATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 1.9 mΩ at VGS=4.5 V and supports a continuous drain current of up to 149 A at TC=25°C. The device utilizes a PG-TDSON-8 package, providing a thermal resistance from junction to case of 1.8 K/W. Key dynamic parameters include a total gate charge of 44 nC (0V to 10V) and an output charge of 25 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Features very low on-resistance at logic-level gate voltages
- Includes monolithically integrated Schottky-like diode
- Subjected to 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance Buck converters
- Motor control circuits
- Switching power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel dimensions or tape specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing synchronous rectification stages requiring low conduction losses at 4.5 V drive levels. Evaluate the thermal management strategy based on the 1.8 K/W junction-to-case resistance and the 69 W power dissipation capability at 25°C case temperature.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS family, designed for efficient power switching. The base model BSC0901NS is housed in a PG-TDSON-8 package. The ATMA1 suffix indicates a specific manufacturing and packaging configuration provided by Infineon Technologies AG.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same series include BSC0901NSI and BSZ0901NSI. Verify pinout compatibility and thermal characteristics when replacing the TDSON-8 package with SuperSO8 or PQFN variants.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
