BSC0906NSATMA1

$0.71

Description：MOSFET N-CH 30V 18A/63A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:05f2381b2ee2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC0906NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 18A/63A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0906NSATMA1

Description：MOSFET N-CH 30V 18A/63A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0906NSATMA1

BSC0906NSATMA1

Single FETs, MOSFETs Overview

The BSC0906NSATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-state resistance of 4.5 mΩ and supports a continuous drain current of 63 A at 25°C case temperature. The device utilizes a PG-TDSON-8 surface-mount package. Key electrical parameters include a gate charge of 13 nC (0V to 10V) and an output charge of 8.6 nC. It is qualified according to JEDEC standards and includes 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance buck converter applications
Features superior thermal resistance characteristics
Designed for clean switching performance
Includes monolithically integrated reverse diode

Single FETs, MOSFETs Applications

High-performance synchronous buck converters
DC-DC power supply modules
Low-voltage load switch circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required tape-and-reel packaging configuration. Confirm that the component marking '0906NS' aligns with production batch requirements. Ensure compliance with RoHS and halogen-free specifications as defined in IEC61249-2-21. Validate that the PG-TDSON-8 footprint matches the target PCB design constraints.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring efficient synchronous rectification. The low gate charge and optimized switching characteristics support high-frequency operation. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values under different operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, specifically engineered for low-voltage power switching. The BSC0906NS variant focuses on minimizing conduction losses while maintaining robust avalanche capability. It serves as a standard solution for modern compact power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include BSC0904NSI and BSZ0902NS. Verify pinout compatibility and ensure that the alternative device meets or exceeds the required 30 V breakdown voltage and current handling capabilities.