ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC090N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 13A/48A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC090N03LSGATMA1
- Description：MOSFET N-CH 30V 13A/48A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 32W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC090N03LSGATMA1
Single FETs, MOSFETs Overview
The BSC090N03LSGATMA1 is an N-channel OptiMOS™3 Power-MOSFET in a PG-TDSON-8 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 48 A at 25 °C case temperature. The on-resistance is 9 mΩ max at 10 V gate drive and 11.2 mΩ max at 4.5 V. Total gate charge is 18 nC at 10 V and 8.9 nC at 4.5 V. Thermal resistance junction-to-case is 3.9 K/W, with power dissipation rated at 32 W.
Single FETs, MOSFETs Feature Summary
- Logic level operation optimized for low gate drive voltages
- Avalanche rated capability for robust transient handling
- Superior thermal resistance for efficient heat dissipation
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- High-efficiency switching mode power supplies (SMPS)
- Low voltage motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the component marking '090N03LS' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the required tape-and-reel packaging specifications. Confirm RoHS compliance and halogen-free status through official manufacturer documentation before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this device when low conduction losses are critical in 30 V systems. The logic-level threshold supports direct driving from standard microcontrollers or low-voltage gate drivers. Evaluate the trade-off between the 9 mΩ on-resistance and the total gate charge to optimize switching frequency and efficiency.
Single FETs, MOSFETs Part Context
This component belongs to Infineon's OptiMOS™3 family, designed specifically for high-efficiency power conversion. It utilizes advanced trench technology to minimize on-resistance while maintaining fast switching speeds. The PG-TDSON-8 package provides a compact footprint suitable for dense PCB layouts.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other OptiMOS™3 variants such as BSC090N03MS-G for alternative packaging options. Verify that any substitute maintains identical pinout, thermal characteristics, and electrical ratings to ensure circuit compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
