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BSC110N06NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 50A TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC110N06NS3GATMA1
- Description：MOSFET N-CH 60V 50A TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC110N06NS3GATMA1
Single FETs, MOSFETs Overview
The BSC110N06NS3GATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 series, housed in a TDSON-8 surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 50A at 25°C. The device exhibits a maximum on-state resistance of 9 milliohms at a gate-source voltage of 10V. Key switching parameters include a total gate charge of 33 nanocoulombs, a fall time of 6 nanoseconds, and a rise time of 77 nanoseconds. Thermal performance is defined by a power dissipation limit of 50W and an operating junction temperature range spanning from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high-efficiency conduction
- Enhanced thermal stability with high junction temperature capability
- Fast switching characteristics suitable for high-frequency applications
Single FETs, MOSFETs Applications
- High-side and low-side switching in synchronous buck converters
- Motor control circuits requiring robust N-channel switching
- DC-DC converter stages in industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GATMA1 against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard TDSON-8 footprint dimensions during PCB layout. Cross-reference RoHS compliance status directly with manufacturer documentation prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a balance between low conduction loss and manageable gate drive requirements is necessary. The 60V rating suits systems operating below this threshold with adequate safety margins. Consider the 50A current limit relative to actual thermal management capabilities within the target enclosure design.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 family, representing a generation of silicon-based power MOSFETs designed for improved efficiency over previous iterations. The TDSON-8 package provides a compact solution for space-constrained designs while maintaining sufficient thermal dissipation paths for moderate power levels.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for direct equivalents. Verify pinout compatibility and electrical parameter overlaps before substituting with other manufacturers' devices.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
