BSC160N15NS5SCATMA1

$2.63

Description：MOSFET N-CH 150V 56A PG-WSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:65dee70b7714 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC160N15NS5SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 56A PG-WSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC160N15NS5SCATMA1

Description：MOSFET N-CH 150V 56A PG-WSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id：4.6V @ 60µA
Gate Charge (Qg) (Max) @ Vgs：23.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1820 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：115W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-WSON-8-2
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for BSC160N15NS5SCATMA1

BSC160N15NS5SCATMA1

Single FETs, MOSFETs Overview

The BSC160N15NS5SCATMA1 is an OptiMOS™ 5 N-channel power transistor rated for a maximum drain-source voltage of 150 V. It features a maximum on-state resistance of 16 mΩ and supports a continuous drain current of 56 A at 25 °C. The device utilizes a PG-VSON-8 or PG-WSON-8 dual-side cooled package, providing a thermal resistance from junction to bottom case of 1.3 K/W and from junction to top case of 0.94 K/W. It operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Dual-side cooled package design enabling lowest junction-to-top thermal resistance
Optimized for high-frequency switching and synchronous rectification applications
Excellent gate charge x Rds(on) product figure of merit
Very low reverse recovery charge characteristics

Single FETs, MOSFETs Applications

High-frequency switching circuits
Synchronous rectification systems
Industrial power conversion modules

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component revision aligns with the latest datasheet version 2.2. Ensure the specific package variant (PG-VSON-8 or PG-WSON-8) corresponds to the intended PCB footprint requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low thermal resistance and high efficiency are critical for the application. The dual-side cooling capability allows for superior heat dissipation compared to standard packages. Evaluate the total gate charge and output capacitance against the required switching frequency to ensure optimal drive circuit compatibility and minimal switching losses.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for industrial applications. It represents a generation of power transistors focused on reducing conduction and switching losses through advanced trench technology. The device is qualified according to JEDEC standards for robustness in demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 150 V rating, 16 mΩ maximum Rds(on), and identical PG-VSON-8/PG-WSON-8 pinout. Verify thermal resistance values and operating temperature limits to ensure equivalent performance without redesigning the cooling infrastructure.