BSC440N10NS3GATMA1

$1.04

Description：MOSFET N-CH 100V 5.3A/18A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d53969148867 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC440N10NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 5.3A/18A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC440N10NS3GATMA1

Description：MOSFET N-CH 100V 5.3A/18A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs：10.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：810 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC440N10NS3GATMA1

BSC440N10NS3GATMA1

Single FETs, MOSFETs Overview

The BSC440N10NS3GATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a 100 V drain-source voltage rating and a continuous drain current of 18 A at 25 °C. The device offers a maximum on-resistance of 38 mΩ at 10 V gate drive. Packaged in a TSDSON-8 surface-mount format, it supports a junction temperature range from -55 °C to +150 °C with a power dissipation capacity of 29 W.

Single FETs, MOSFETs Feature Summary

OptiMOS 3 technology integration for optimized performance
Enhanced single-channel N-configuration
Surface-mount TSDSON-8 package design

Single FETs, MOSFETs Applications

General purpose switching applications
Low-side load switching circuits
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel specifications. Confirm that the component meets required RoHS and REACH compliance standards for your target market. Cross-reference the datasheet revision date to ensure alignment with current manufacturing parameters and quality certifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 100 V applications. The low on-resistance supports efficient power handling in space-constrained designs. Ensure the thermal management strategy accommodates the specified power dissipation limits within the operating temperature range for reliable long-term performance.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of silicon-based power MOSFETs. It represents a standard enhancement-mode device designed for general industrial and consumer electronics markets. The TSDSON-8 package provides a balance between thermal performance and board space efficiency compared to larger through-hole alternatives.