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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 10A TO263
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.45 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：500pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDB10S65E6 is a Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 10 A average forward current. It operates within a junction temperature range of -55 °C to +175 °C. The device features a maximum non-repetitive peak forward surge current of 80 A and total power dissipation of 125 W. Electrical characteristics include a typical forward voltage of 1.29 V at 10 A and 25 °C, with a maximum reverse leakage current of 50 μA at 650 V and 25 °C. The component utilizes a TO263 (D2PAK) package.
Feature Summary
- Low forward voltage drop for high efficiency
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies
- Power Factor Correction
- PV inverters
- DC-DC converters
- Motor drives
Procurement Notes
Verify the specific RoHS compliance status and halogen-free designation against the latest official datasheet prior to procurement. Confirm that the TO263 package dimensions align with the intended PCB footprint design. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring high-frequency rectification with low switching losses. The silicon carbide construction supports elevated operating temperatures up to 175 °C. Evaluate the forward voltage characteristics at expected load currents and junction temperatures to ensure system efficiency targets are met.
Part Context
This part belongs to the Bourns Silicon Carbide Schottky Diode series. These components are designed for high-efficiency power conversion applications. The product line emphasizes reduced thermal resistance and low power loss compared to traditional silicon alternatives.
Replacement Considerations
Consult the official Bourns selector guide for alternative SiC Schottky diodes with matching voltage and current ratings. Verify pinout compatibility and package dimensions before substituting any other manufacturer's components.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Is the epoxy compound flame retardant?
Yes, the epoxy compound is flame retardant to the UL 94V-0 standard.
