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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 6A TO252
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：6A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 6 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：30 µA @ 650 V
- Capacitance @ Vr, F：201pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDD06G65E2 is a Silicon Carbide Schottky Diode rated for 650 V repetitive peak reverse voltage and 6 A average forward current. It features a maximum operating junction temperature of +175 °C and operates within a -55 °C to +175 °C range. The device exhibits low reverse leakage current, high peak forward surge capability, and reduced electromagnetic interference. Packaged in a TO-252 (DPAK) surface-mount format, it provides excellent current carrying capacity with low power loss.
Feature Summary
- High efficiency operation with low power loss
- Low reverse leakage current characteristics
- High peak forward surge current capability
- Reduced electromagnetic interference emissions
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Photovoltaic inverters
- DC-DC converters
- Telecommunications systems
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer before finalizing procurement plans. Confirm that the TO-252 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Selection Notes
Select this component when designing circuits requiring high-frequency switching capabilities combined with robust surge handling. The silicon carbide construction supports elevated operating temperatures up to 175 °C, making it suitable for compact designs where thermal dissipation is constrained. Evaluate the forward voltage drop at expected load currents to ensure system efficiency targets are met.
Part Context
This part belongs to the BSD series of silicon carbide Schottky diodes manufactured by Bourns. These components utilize advanced SiC substrate technology to deliver superior performance compared to traditional silicon rectifiers. The series is engineered specifically for high-efficiency power conversion applications demanding reliability and reduced thermal resistance.
Replacement Considerations
Consult official Bourns documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying electrical parameters and physical package compatibility.
