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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 8A TO252
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：8A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 8 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：40 µA @ 650 V
- Capacitance @ Vr, F：267pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDD08G65E2 is a Silicon Carbide Schottky Diode housed in a TO-252 (DPAK) package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 8 A. The device supports a non-repetitive peak forward surge current of 48 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.3 V at 175 °C, a typical diode capacitance of 267 pF, and a recovered charge of 12 nC.
Feature Summary
- High efficiency with low power loss
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- PV inverters
- DC-DC converters
- Telecommunications
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-252 footprint matches the recommended layout provided in the component drawings. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for high-frequency rectification applications requiring robust transient handling. The silicon carbide construction provides superior performance compared to standard silicon diodes, particularly regarding switching losses and thermal stability. Evaluate the 8 A continuous current rating against the specific duty cycle and mounting base temperature constraints defined in the derating curves.
Part Context
This part belongs to the Bourns Silicon Carbide Schottky Diode series, designed for advanced power conversion systems. The model designation indicates an 8 A current rating and a 650 V blocking voltage within the TO-252 surface-mount package. It is engineered to replace traditional silicon rectifiers in demanding environments where reduced thermal resistance and high reliability are critical.
Replacement Considerations
BSDD06G65E2
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Does the device exhibit reverse recovery behavior?
Yes, the datasheet specifies a recovered charge of 12 nC when tested at a di/dt of 500 A/μs.
