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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 10A TO252
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：323pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDD10G65E2 is a Silicon Carbide Schottky Diode housed in a TO-252 (DPAK) package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 10 A. The device supports a non-repetitive peak forward surge current of 55 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.3 V at 10 A and 175 °C, with a typical recovered charge of 14.5 nC.
Feature Summary
- High efficiency operation with low power loss
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies
- Power Factor Correction
- PV inverters
- DC-DC converters
- Telecommunications
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer before procurement. Confirm that the TO-252 package dimensions match your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for high-frequency rectification applications requiring robust surge handling and wide temperature operation. Evaluate the thermal performance against your system's mounting base temperature limits. Consider the low forward voltage drop and minimal reverse recovery charge for improved overall converter efficiency.
Part Context
This silicon carbide diode belongs to Bourns' advanced power semiconductor portfolio designed for high-efficiency energy conversion. Utilizing SiC technology allows for superior performance compared to traditional silicon devices, particularly in high-voltage and high-temperature environments common in modern power electronics.
Replacement Considerations
BSDD10S65E6
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Does the device exhibit reverse recovery charge?
Yes, the device has a typical recovered charge of 14.5 nC when tested at dIF/dt = 500 A/μs, VR = 400 V, and IF = 10 A.
