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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 6A TO220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：6A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 6 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：30 µA @ 650 V
- Capacitance @ Vr, F：201pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDH06G65E2 is a Silicon Carbide Schottky Diode housed in a TO220-2 package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 6 A. The device supports a non-repetitive peak forward surge current of 40 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.3 V at 175 °C and a typical recovered charge of 9 nC.
Feature Summary
- High efficiency with low power loss
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- PV inverters
- DC-DC converters
- Telecommunications
- Motor drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances, packaging configuration, and environmental compliance status. Ensure that the selected component meets all thermal management requirements for the intended mounting base temperature and duty cycle conditions specified in the datasheet.
Selection Notes
Select this component for high-frequency rectification applications requiring robust surge handling and minimal conduction losses. Evaluate the thermal resistance from junction to ambient and junction to mounting base to ensure adequate heat dissipation. Confirm compatibility with the system's operating voltage and current profiles under varying temperature conditions.
Part Context
This silicon carbide diode belongs to the BSD series designed for general-purpose rectification. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The TO220-2 package facilitates efficient thermal transfer to heatsinks, making it suitable for medium-power industrial and commercial electronics.
Replacement Considerations
Consult the official Bourns selector guide for direct equivalents within the SDH06G family. Verify pinout compatibility and thermal characteristics when substituting with components from other manufacturers.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Does the device meet RoHS standards?
Yes, the BSDH06G65E2 is RoHS compliant, lead-free, and halogen-free.
