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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 8A TO220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：8A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 8 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：40 µA @ 650 V
- Capacitance @ Vr, F：267pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDH08G65E2 is a Silicon Carbide Schottky diode in a TO-220-2 package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 8 A. The device supports a non-repetitive peak forward surge current of 48 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.3 V at 175 °C and a typical recovered charge of 12 nC.
Feature Summary
- High efficiency with low power loss
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- PV inverters
- DC-DC converters
- Telecommunications
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer before procurement. Confirm that the TO-220-2 mounting base thermal interface meets your application's heat dissipation requirements. Ensure the operating environment remains within the specified -55 °C to +175 °C junction temperature limits for reliable performance.
Selection Notes
Select this component for high-frequency rectification applications requiring low forward voltage drop and minimal switching losses. The silicon carbide construction allows for higher operating temperatures compared to standard silicon diodes. Evaluate the thermal resistance from junction to mounting base to ensure adequate heat sinking for sustained 8 A operation.
Part Context
This part belongs to the SDH series of silicon carbide Schottky barrier diodes manufactured by Bourns. These components are designed for general-purpose rectification where high efficiency and thermal stability are critical. The TO-220-2 package facilitates easy mounting on heatsinks for power management circuits.
Replacement Considerations
Consult the official Bourns product selector or technical library for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameters against the original specifications.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Is the epoxy compound flame retardant?
Yes, the epoxy compound is flame retardant to the UL 94V-0 standard.
What is the typical recovered charge value?
The typical recovered charge is 12 nC under conditions of dIF/dt = 500 A/μs, VR = 400 V, and IF = 8 A.
