BSDH10G65E2

$2.75

Description：DIODE SIL CARBIDE 650V 10A TO220
Series：-
Mfr：Bourns Inc.
Package：Tube

SKU:504de5045ece Category: Single Diodes Brand: Bourns Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARBIDE 650V 10A TO220
Series：-
Mfr：Bourns Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Capacitance @ Vr, F：323pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：TO-220-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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BSDH10G65E2

Overview

The Bourns BSDH10G65E2 is a Silicon Carbide (SiC) Schottky diode housed in a TO220-2 package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 10 A. The device supports a non-repetitive peak forward surge current of 60 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.3 V at 10 A and 175 °C, with a typical reverse leakage current of 50 µA at 650 V and 25 °C.

Feature Summary

High efficiency operation with low power loss
Low reverse leakage current
Reduced electromagnetic interference (EMI)
Flame retardant epoxy compound meeting UL 94V-0 standard

Applications

Switched-Mode Power Supplies (SMPS)
Power Factor Correction (PFC)
PV inverters
DC-DC converters
Telecommunications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status, as RoHS and halogen-free designations are explicitly noted for this part number. Ensure that the TO220-2 package dimensions and pinout configuration match the target PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component for high-frequency rectification applications requiring superior thermal performance and reduced switching losses compared to traditional silicon devices. The wide operating junction temperature range up to 175 °C allows for robust operation in thermally constrained environments without significant derating.

Part Context

This component belongs to the Bourns BSDH series of Silicon Carbide Schottky Diodes. The series is engineered to provide excellent current carrying capacity and low forward voltage drop. The specific model utilizes a TO220-2 package suitable for high-frequency switched-mode power supplies.

Replacement Considerations

Consult the official Bourns product selector or technical library for verified substitute part numbers. Cross-reference absolute maximum ratings and thermal characteristics to ensure compatibility with existing circuit designs.