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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 10A TO220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.45 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：500pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDH10S65E6 is a Silicon Carbide Schottky Diode rated for 650 V repetitive peak reverse voltage and 10 A average forward current. It features a low forward voltage drop of 1.29 V at 25 °C and operates up to a maximum junction temperature of 175 °C. The device supports an 85 A non-repetitive peak forward surge current and utilizes a TO220-2 package.
Feature Summary
- Low forward voltage drop for high efficiency
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- PV inverters
- DC-DC converters
- Telecommunications
- Motor drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and versioning. Confirm that the component meets all necessary regulatory standards, including RoHS compliance and halogen-free requirements, prior to integration into final designs.
Selection Notes
Select this component for applications requiring high-frequency rectification with minimal power loss. The TO220-2 package facilitates effective thermal management through mounting base attachment. Ensure the design accounts for the specified thermal resistance values to maintain safe operating temperatures under load.
Part Context
This silicon carbide diode belongs to the BSDH series designed for high-efficiency power conversion. It offers superior current carrying capacity compared to traditional silicon alternatives. The device is engineered to reduce thermal resistance and minimize conduction losses in demanding power electronics environments.
Replacement Considerations
Consult the official Bourns product selector or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying electrical parameters and physical dimensions.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
What package type does the BSDH10S65E6 use?
It uses a TO220-2 package suitable for high-frequency switched-mode power supplies.
